Circuit analysis of active mode parasitic oscillations in IGBT modules

IEE Proceedings: Circuits, Devices and Systems

Volumn 150, Issue 2, 2003, Pages 85-91

  Palmer, P R ^a   Joyce, J C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CIRCUIT OSCILLATIONS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INDUCTANCE; RESISTORS; TRANSCONDUCTANCE; TRANSIENTS;

ACTIVE MODE PARASITIC OSCILLATIONS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0037644857     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20030336     Document Type: Review

References (21)

1. KASSAKIAN, J.G., and LAU, D.: 'An analysis and experimental verification of parasitic oscillations in paralleled power MOSFETs', IEEE Trans. Electron Devices, 1984, 31, (7), pp. 959-963
2. KORN, S.R.: 'Parallel oepration of the insulated gate transistor in switching operations'. Proceedings of Power Conversion International Conference, June 1986, pp. 218-234
3. PALMER, P.R., and JOYCE, J.C.: 'Causes of parasitic current oscillation in IGBT modules during turn-off. Presented at 8th European Conference on Power electronics and applications, Lausanne, Switzerland, Sept. 1999, paper 376
4. OGURA, T., SUGIYAMA, K., HASEGAWA, S., MATSUDA, H., and OHASHI, H.: 'High turn-off current capability of parallel connected 4.5 kV Trench IEGTs'. Proceedings of IEEE/IEJ International Symposium on Power semiconductor devices, Kyoto, May 1998, pp. 47-50
5. LETOR, R.: 'Static and dynamic behaviour of paralleled IGBTs', IEEE Trans. Ind. Appl., 1992, 28, (2), pp. 395-402
6. HEFNER, A., and BLACKBURN, D.L.: 'An analytical model for the steady state and transient characteristics of the power insulated-gate bipolar transistor', Solid-State Electron., 1988, 31, (10), pp. 1513-1532
7. HEFNER, A.R.: 'An improved understanding of the transient operation of the power insulted gate bipolar transistor (IGBT)', IEEE Trans. Power Electron., 1990, 5, (4), pp. 459-468
8. DUTTON, R.W., and YU, Z.: 'Technology CAD: Computer Simulation of IC Processes and Devices' (Kluwer Academic, 1993)
9. GITHIARI, A.N., and PALMER, P.R.: 'An analysis of the series connection of IGBTs', IEE Proc., Circuits Devices Syst., 1998,145, (5), pp. 354-360
10. Mathcad, S.E., Version 6, http://www.mathsoft.com/, 1999
11. PSPICE, Version 9, http://www.orcad.com, 1999
12. ATLAS, http://www.silvaco.com/products/vwf/atlas/atlas.html, 2001
13. PALMER, P.R., STARK, B.H., and JOYCE, J.C.: 'Noninvasive measurement of chip currents in IGBT modules'. Proceedings of IEEE Power Electronics Specialists Conference, St Louis, June 1997, Vol. 1, pp. 166-171
14. JOYCE, J.C.: 'Current sharing and redistribution in high power IGBT modules'. D.Phil. Thesis, University of Cambridge, August 2001
15. PALMER, P.R., and JOYCE, J.C.: 'Current redistribution in multichip IGBT modules under various gate drive conditions'. Proceedings of 7th International Conference on Power electronics and variable speed drives (IEE Conference Publication No. 456), London, Sept. 1998, pp. 246-251
16. GUTSMANN, B., MOURICK, P., and SILBER, D.: 'Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents'. Proceedings of IEEE Power Electronics Specialists Conference, Galway, June 2000, pp. 1291-1295
17. CONSOLI, A., GENNARO, F., JOHN, V., and LIPO, T. A.: 'Effects of the internal layout on the performance of IGBT power modules'. Presented at Congresso Brasileiro de Electronica de Potjncia, Foz do Iguacu, Brazil, Sept. 1999
18. SEVERNS, R.: 'Paralleled operation of power MOSFETs' (Siliconix Inc., 1984), Chap. 5, pp. 15-32
19. JEANNIN, P.O., AKHBARI, M., and SCHANEN, J.L.: 'Influence of stray inductances on current sharing during switching transistions in paralleled semiconductors'. Presented at European Power Electronics Conference, Lausanne, Switzerland, 1999, paper 614
20. TAKAHASHI, Y., YOSHIKAWA, K., SOUTOME, M., FUJII, T., KIRIHATA, H., and SEKI, Y.: '2.5kV-1000A Power pack IGBT (high power flat-packaged NPT type RC-IGBT)', IEEE Trans. Electron Devices, 1999, 46, (1), pp. 245-250
21. GUTSMANN, B., SILBER, D., and MOURICK, P.: 'Explanation of IGBT tail current oscillations by a novel 'plasma extraction transit time' mechanism'. Proceedings of 31st European Solid State Device Research Conference, Nurembourg, Sept. 2001, pp. 255-258