High temperature packaging of 50 kW three-phase SiC power module

8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia

Volumn , Issue , 2011, Pages 2427-2433

  Xu, Fan ^a   Jiang, Dong ^a   Wang, Jing ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Han, Timothy Junghee ^b   Nagashima, Jim ^b   Kim, Sung Joon ^b  

^a University of Tennessee   (United States)

^b Global Power Electronics   (United States)

Author keywords

High Power; High Temperature; Packaging; SiC JFET Power Module

Indexed keywords

DC-BUS VOLTAGES; ELECTRICAL PERFORMANCE; FAST SWITCHING; GATE DRIVERS; GATE RESISTANCE; HIGH EFFICIENCY; HIGH TEMPERATURE; HIGH-POWER; HIGH-TEMPERATURE PACKAGING; LOW POWER LOSS; ON-STATE RESISTANCE; PACKAGE PARASITICS; POWER MODULE; SHOTTKY BARRIER; SIC JFET POWER MODULE; STATIC CHARACTERISTIC; SUBSTRATE LAYOUT; SWITCHING ELEMENTS; SWITCHING PERFORMANCE; SWITCHING TIME; THREE-PHASE INVERTER;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; EXPERIMENTS; HIGH TEMPERATURE APPLICATIONS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SWITCHING;

DC POWER TRANSMISSION;

EID: 80052100930     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2011.5944718     Document Type: Conference Paper

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