Monitoring potential defects in an IGBT module based on dynamic changes of the gate current

IEEE Transactions on Power Electronics

Volumn 28, Issue 3, 2013, Pages 1479-1487

  Zhou, Shengqi ^a   Zhou, Luowei ^a   Sun, Pengju ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

Defect; insulated gate bipolar transistor (IGBT); power electronics; relevance vector machine (RVM)

Indexed keywords

ACCURATE PREDICTION; DYNAMIC CHANGES; GATE CIRCUIT; GATE CURRENT; HEALTH MONITORING; INSULATED GATE BIPOLAR TRANSISTOR MODULES; LOCAL DAMAGE; MODULE-BASED; ON DYNAMICS; PARASITIC ELEMENT; POTENTIAL DEFECTS; PROGNOSTIC APPROACH; RELEVANCE VECTOR MACHINE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS;

DEFECTS;

EID: 84867813071     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2210249     Document Type: Article

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