Advances in SiC VJFETs for renewable and high-efficiency power electronics applications

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 3254-3258

  Sheridan, D C ^a   Ritenour, A ^a   Kelley, R ^a   Bondarenko, V ^a   Casady, J B ^a  

^a SemiSouth Laboratories Inc   (United States)

Author keywords

IGBT; JFET; Module; SiC; Silicon carbide; Switching energy

Indexed keywords

IGBT; JFET; MODULE; SIC; SWITCHING ENERGY;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS;

SILICON CARBIDE;

EID: 77956548012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543703     Document Type: Conference Paper

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