Uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts

ACS Applied Materials and Interfaces

Volumn 6, Issue 1, 2014, Pages 575-584

  Li, Liyi ^a   Liu, Yan ^a   Zhao, Xueying ^a   Lin, Ziyin ^a   Wong, Ching Ping ^a,b  

^a Georgia Institute of Technology   (United States)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

deep trenches; electropolishing; high aspect ratio; metal assisted chemical etching; nanoporous catalyst; uniformity

Indexed keywords

DEEP TRENCH; HIGH ASPECT RATIO; METAL-ASSISTED CHEMICAL ETCHING; NANO-POROUS CATALYSTS; UNIFORMITY;

ASPECT RATIO; CATALYSTS; ELECTROLYTIC POLISHING; HYDROFLUORIC ACID; SILICON;

ETCHING;

EID: 84892385266     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4046519     Document Type: Article

References (38)

1. Hernández, D.; Lange, D.; Trifonov, T.; Garín, M.; García, M.; Rodríguez, A.; Alcubilla, R. Microelectron. Eng. 2010, 87, 1458-1462
2. Ayazi, F.; Najafi, K. J. Microelectromech. Syst. 2000, 9, 288-294
3. Amon, J.; Kieslich, A.; Heineck, L.; Faul, T. S. J.; Luetzen, J.; Fan, C.; Huang, C. C.; Fischer, B.; Enders, G.; Kudelka, S.; Schroeder, U.; Kuesters, K. H.; Lange, G.; Alsmeier, J. A highly manufacturable deep trench based DRAM cell layout with a planar array device in a 70nm technology; IEEE: New York, 2004; pp 73-76.
4. Barillaro, G.; Merlo, S.; Strambini, L. M. IEEE J. Sel. Top. Quantum. Electron. 2008, 14, 1074-1081
5. Henry, M. D.; Welch, C.; Scherer, A. J. Vac. Sci. Technol., A 2009, 27, 1211-1216
6. Bondur, J. A. J. Vac. Sci. Technol. 1976, 13, 1023-1029
7. Laermer, F.; Schilp, A. Method of Anisotropically Etching Silicon. U.S. Patent 5,501,893, 1996.
8. Wu, Y.; Olynick, D. L.; Goodyear, A.; Peroz, C.; Dhuey, S.; Liang, X.; Cabrini, S. Microelectron. Eng. 2011, 88, 2785-2789
9. Ahn, M.; Heilmann, R. K.; Schattenburg, M. L. J. Vac. Sci. Technol., B 2007, 25, 2593-2597
10. Lehmann, V.; Föll, H. J. Electrochem. Soc. 1990, 137, 653-659
11. Lehmann, V.; Grüning, U. Thin Solid Films 1997, 297, 13-17
12. Föll, H.; Christophersen, M.; Carstensen, J.; Hasse, G. Mater. Sci. Eng., R 2002, 39, 93-141
13. Hildreth, O. J.; Fedorov, A. G.; Wong, C. P. ACS Nano 2012, 6, 10004-10012
14. Huang, Z.; Geyer, N.; Werner, P.; de Boor, J.; Gösele, U. Adv. Mater. 2011, 23, 285-308
15. Huang, Z.; Zhang, X.; Reiche, M.; Liu, L.; Lee, W.; Shimizu, T.; Senz, S.; Gösele, U. Nano Lett. 2008, 8, 3046-3051
16. Huang, Z.; Shimizu, T.; Senz, S.; Zhang, Z.; Zhang, X.; Lee, W.; Geyer, N.; Gösele, U. Nano Lett. 2009, 9, 2519-2525
17. Kim, J.; Kim, Y. H.; Choi, S.-H.; Lee, W. ACS Nano 2011, 5, 5242-5248
18. Rykaczewski, K.; Hildreth, O. J.; Wong, C. P.; Fedorov, A. G.; Scott, J. H. J. Adv. Mater. 2011, 23, 659-663
19. Xiu, Y.; Zhang, S.; Yelundur, V.; Rohatgi, A.; Hess, D. W.; Wong, C. P. Langmuir 2008, 24, 10421-10426
20. Liu, Y.; Xiu, Y.; Hess, D. W.; Wong, C. P. Langmuir 2010, 26, 8908-8913
21. DeJarld, M.; Shin, J. C.; Chern, W.; Chanda, D.; Balasundaram, K.; Rogers, J. A.; Li, X. Nano Lett. 2011, 11, 5259-5263
22. Hildreth, O. J.; Lin, W.; Wong, C. P. ACS Nano 2009, 3, 4033-4042
23. Rykaczewski, K.; Hildreth, O. J.; Wong, C. P.; Fedorov, A. G.; Scott, J. H. J. Nano Lett. 2011, 11, 2369-2374
24. Hildreth, O. J.; Brown, D.; Wong, C. P. Adv. Funct. Mater. 2011, 21, 3119-3128
25. Hildreth, O. J.; Rykaczewski, K.; Fedorov, A. G.; Wong, C. P. Nanoscale 2013, 5, 961-970
26. Lianto, P.; Yu, S.; Wu, J.; Thompson, C. V.; Choi, W. K. Nanoscale 2012, 4, 7532-7539
27. Geyer, N.; Fuhrmann, B.; Huang, Z.; de Boor, J.; Leipner, H. S.; Werner, P. J. Phys. Chem. C 2012, 116, 13446-13451
28. Chartier, C.; Bastide, S.; Lévy-Clément, C. Electrochim. Acta 2008, 53, 5509-5516
29. Tsujino, K.; Matsumura, M. Electrochim. Acta 2007, 53, 28-34
30. Sangiorgi, R.; Muolo, M. L.; Chatain, D.; Eustathopoulos, N. J. Am. Ceram. Soc. 1988, 71, 742-748
31. Boero, M.; Vincent, J. K.; Inkson, J. C.; Mejias, M.; Vieu, C.; Launois, H.; Mulheran, P. A. J. Appl. Phys. 2000, 87, 7261-7265
32. Lehmann, V. Electrochemistry of Silicon; Wiley-VCH Verlag GmBH: Weinheim, Germany, 2002; p 77.
33. Chang, S. W.; Chuang, V. P.; Boles, S. T.; Thompson, C. V. Adv. Funct. Mater. 2010, 20, 4364-4370
34. Chang, C.; Wang, Y.-F.; Kanamori, Y.; Shih, J.-J.; Kawai, Y.; Lee, C.-K.; Wu, K.-C.; Esashi, M. J. Micromech. Microeng. 2005, 15, 580-585
35. Mohammad, Z.; Saeed Delaram, F.; Mahdi, K.; Hamed, M.; Alireza, E.; Firooz, Z. J. Micromech. Microeng. 2013, 23, 055015
36. Hung, S. C.; Shiu, S. C.; Chao, J. J.; Lin, C. F. J. Electrochem. Soc. 2010, 157, D496-D499
37. Güder, F.; Yang, Y.; Küçükbayrak, U. M.; Zacharias, M. ACS Nano 2013, 7, 1583-1590
38. Huang, Z.; Shimizu, T.; Senz, S.; Zhang, Z.; Geyer, N.; Gösele, U. J. Phys. Chem. C 2010, 114, 10683-10690