Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts

Journal of Physical Chemistry C

Volumn 116, Issue 24, 2012, Pages 13446-13451

  Geyer, Nadine ^a   Fuhrmann, Bodo ^b   Huang, Zhipeng ^c   De Boor, Johannes ^a   Leipner, Hartmut S ^b   Werner, Peter ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c JIANGSU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CONTACT; DOPING LEVELS; ELECTRONIC HOLES; ETCHING MECHANISM; ETCHING PROCESS; METAL FILM; METAL THIN FILM; METAL-ASSISTED CHEMICAL ETCHING; MICROSCOPIC SCALE; NOBLE-METAL FILMS; POROUS LAYERS; SI NANOWIRE; SI OXIDE; SI SUBSTRATES; SI/GE SUPERLATTICES; SIMPLE METHOD; SURFACE PATTERN; THIN POROUS LAYERS; TOP-DOWN APPROACH;

BYPRODUCTS; CATALYSTS; ELECTROLYTIC POLISHING; EXPERIMENTS; METALLIC FILMS; METALS; NANOWIRES; PRECIOUS METALS; SEMICONDUCTOR DOPING; SILICON;

ETCHING;

EID: 84863333159     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3034227     Document Type: Article

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