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Journal of the Electrochemical Society

Volumn 157, Issue 9, 2010, Pages

Fabrication of deep si trenches by self-assembled wet chemical etching process

(4) Hung, S C a Shiu, S C a Chao, J J a Lin, C F a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOPARTICLE; ETCHING MASKS; HIGH ANISOTROPY; HIGH SELECTIVITY; PHOTOLITHOGRAPHY PROCESS; POROUS STRUCTURES; SELF-ASSEMBLED; SI SURFACES; SI WAFER; SILICON NANOWIRES; TRENCH SIDEWALLS; WAFER SURFACE; WET-CHEMICAL ETCHING;

ANISOTROPY; NANOWIRES; PHOTORESISTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SILVER;

WET ETCHING;

EID: 77955795727 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3462976 Document Type: Article

Times cited : (5)

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