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Nanoscale

Volumn 4, Issue 23, 2012, Pages 7532-7539

Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon

(5) Lianto, Prayudi a Yu, Sihang b Wu, Jiaxin c Thompson, C V a,d Choi, W K a,b,c

a SINGAPORE MIT ALLIANCE (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

d Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AU CATALYSTS; CATALYST STABILITY; CATALYST STRUCTURES; EFFECT OF HYDROGEN; ELECTRONIC HOLES; ETCH CHEMISTRY; ETCHING SOLUTIONS; HF CONCENTRATION; METAL-ASSISTED CHEMICAL ETCHING; PATTERNED CATALYST; PIT FORMATION; SI WAFER; SYSTEMATIC STUDY; VERTICAL ETCHING;

CHEMICAL STABILITY; ELECTRIC FIELDS; ETCHING; HYDROGEN; SILICON; SILICON WAFERS; SODIUM CHLORIDE; STABILITY;

CATALYSTS;

EID: 84870946593 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr32350h Document Type: Article

Times cited : (65)

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