Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions

Nano Letters

Volumn 9, Issue 7, 2009, Pages 2519-2525

  Huang, Zhipeng ^a   Shimizu, Tomohiro ^a   Senz, Stephan ^a   Zhang, Zhang ^a   Zhang, Xuanxiong ^a,b   Lee, Woo ^a,c   Geyer, Nadine ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Korea Research Institute of Standards and Science   (South Korea)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC METALS; DEPOSITED METAL; GENERIC METHOD; LATERAL SIZES; METAL MESH; METAL PARTICLE; NANOHOLES; ORDERED ARRAY; PORE DIAMETERS; POROUS ALUMINA; POROUS ANODIC ALUMINA; PRE-PATTERNING; SI NANOWIRE; SI(110); SILICON NANOWIRES; SMALL AREA; THIN METAL FILMS; ULTRA-THIN; VERTICALLY ALIGNED; WAFER-SCALE;

ALUMINA; CATALYSIS; CATALYSTS; ELECTRIC WIRE; ETCHING; METALLIC FILMS; MORPHOLOGY; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES;

METALS;

NANOWIRE; SILICON; SILVER;

ARTICLE; CATALYSIS; CHEMISTRY; CRYSTALLIZATION; POROSITY; SCANNING ELECTRON MICROSCOPY;

CATALYSIS; CRYSTALLIZATION; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES; POROSITY; SILICON; SILVER;

EID: 67650349085     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803558n     Document Type: Article

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