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Advanced Materials

Volumn 23, Issue 5, 2011, Pages 659-663

Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

(5) Rykaczewski, Konrad a Hildreth, Owen J b Wong, Ching P b Fedorov, Andrei G c Scott, John Henry J a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D MOTION; CATALYST STRUCTURES; METAL-ASSISTED CHEMICAL ETCHING; PATTERN TRANSFERS;

CATALYSTS; ETCHING;

THREE DIMENSIONAL;

SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; METHODOLOGY; MICROTECHNOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY;

MICROSCOPY, ELECTRON, SCANNING; MICROTECHNOLOGY; MOLECULAR CONFORMATION; NANOTECHNOLOGY; SILICON; SURFACE PROPERTIES;

EID: 79952582287 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201003833 Document Type: Article

Times cited : (28)

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