Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Nano Letters

Volumn 11, Issue 12, 2011, Pages 5259-5263

  Dejarld, Matt ^a   Shin, Jae Cheol ^a   Chern, Winston ^a   Chanda, Debashis ^a   Balasundaram, Karthik ^a   Rogers, John A ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

GaAs; high aspect ratio; MacEtch; metal assisted chemical etching; nanopillar; Nanowire

Indexed keywords

GAAS; HIGH ASPECT RATIO; MACETCH; METAL-ASSISTED CHEMICAL ETCHING; NANOPILLAR;

ASPECT RATIO; DBR LASERS; DISTRIBUTED FEEDBACK LASERS; DRY ETCHING; GALLIUM ARSENIDE; GOLD; NANOWIRES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; VANADIUM;

WET ETCHING;

EID: 83655164363     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202708d     Document Type: Article

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