Single layer MoS 2 band structure and transport

2011 International Semiconductor Device Research Symposium, ISDRS 2011

Volumn , Issue , 2011, Pages

  Salmani Jelodar, Mehdi ^a   Tan, Yaohua ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; EFFECTIVE MASS; GATE LENGTH; GW APPROXIMATION; HIGH MOBILITY; MOLYBDENUM DISULFIDE; NANOELECTRONIC DEVICES; SINGLE LAYER; TWO-DIMENSIONAL MATERIALS; ULTRA-THIN;

ENERGY GAP; GRAPHENE; LOCAL DENSITY APPROXIMATION; MESFET DEVICES; MOLYBDENUM; MONOLAYERS; TWO DIMENSIONAL;

MOLYBDENUM COMPOUNDS;

EID: 84857222269     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2011.6135408     Document Type: Conference Paper

References (10)

1. B. Radisavljevic et al., "Single-layer MoS2 transistors," Nature Nanotech. vol. 6, pp. 147-151 (2011)
2. abinit website: visit http://www.abinit.org.
3. S. Lebegue and O. Eriksson," Electronic structure of two-dimensional crystals from ab initio theory," Phys. Rev. B 79, 115409 (2009)
4. K. F. Mak et al. "Atomically Thin MoS2: A New Direct-Gap Semiconductor," PRL 105, 136805 (2010)
5. T. Olsen et al., "Large Excitonic Effects in the Optical Properties of Monolayer MoS2," arXiv:1107.0600v1, 2011.
6. T. Korn et al., "Low-temperature photocarrier dynamics in monolayer MoS2," Appl. Phys. Lett. vol. 99, pp. 103104 (2011).
7. X. L. Zhang et al., "Dielectric properties of MoS2 and Pt catalysts: effects of temperature and microwave frequency, "Catal. Lett., vol. 84, pp.225 (2002).
8. M. Luisier et al., "Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks," IEEE Trans. on Elec. Dev., vol. 55, p.1494, (2008).
9. Y. Yoon et al., "How Good Can Monolayer MoS2 Transistors Be?," Nano Lett. 2011.
10. L. Liu et al., "Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors," IEEE Trans. on Elec. Dev., vol. 58, no. 9, 2011