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Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

(9) Lee, B a Mordi, G a Kim, M J a Chabal, Y J a Vogel, E M a Wallace, R M a Cho, K J a Colombo, L b Kim, J a

a The University of Texas at Dallas (United States)

b TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DOPING; DEPOSITION PROCESS; GRAPHENE DEVICES; GRAPHENE SHEETS; HIGH DIELECTRIC CONSTANTS; LOW-LEAKAGE CURRENT; RAMAN SPECTRA;

ALUMINUM; ATOMIC LAYER DEPOSITION; CARRIER MOBILITY; DEFECTS; DIELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; OZONE; RAMAN SPECTROSCOPY;

GRAPHENE;

EID: 77955746511 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3467454 Document Type: Article

Times cited : (129)

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