Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Journal of Applied Physics

Volumn 113, Issue 11, 2013, Pages

  Hudait, Mantu K ^a   Zhu, Yan ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; CARRIER CONFINEMENTS; CONDUCTION BAND OFFSET; ENERGY-BAND ALIGNMENT; GAAS SUBSTRATES; LOW POWER APPLICATION; VALENCE BAND OFFSETS;

ALIGNMENT; ATOMIC LAYER DEPOSITION; DEPOSITS; ENERGY GAP; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OXIDE FILMS; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 84875755375     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795284     Document Type: Article

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