PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Chan, J ^a   Balakchiev, M ^a   Thron, A M ^b   Chapman, R A ^a   Riley, D ^c   Song, S C ^c   Jain, A ^c   Blatchford, J ^c   Shaw, J B ^c   Van Benthem, K ^b   Vogel, E M ^d   Hinkle, C L ^a  

^a The University of Texas at Dallas   (United States)

^b University of California Davis   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; CURRENT-VOLTAGE MEASUREMENTS; FUTURE TECHNOLOGIES; HIGH-ANGLE ANNULAR DARK-FIELD IMAGING; INTERNAL PHOTOEMISSION; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENT;

NICKEL; SEMICONDUCTOR METAL BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY;

PLATINUM;

EID: 84875916117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799277     Document Type: Article

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