X-ray photoelectron spectroscopy characterisation of high-k dielectric Al 2 O 3 and HfO 2 layers deposited on SiO 2 /Si surface

Applied Surface Science

Volumn 235, Issue 1-2, 2004, Pages 21-25

  Vitchev, R G ^a   Pireaux, J J ^a   Conard, T ^b   Bender, H ^b   Wolstenholme, J ^c   Defranoux, Chr ^d  

^a UNIVERSITY OF NAMUR   (Belgium)

^b IMEC   (Belgium)

^c Thermo Electron   (United Kingdom)

^d SOPRA   (France)

Author keywords

High k; XPS

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; DATABASE SYSTEMS; DIELECTRIC MATERIALS; ELLIPSOMETRY; INTERFACES (MATERIALS); SILICA; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGULAR CHANNELS; EMISSION ANGLES; GATE CAPACITANCE; INTERFACIAL FILMS;

THIN FILMS;

EID: 4344662503     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.135     Document Type: Conference Paper

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