The influence of thickness and ammonia flow rate on the properties of AlN layers

Materials Science in Semiconductor Processing

Volumn 15, Issue 1, 2012, Pages 32-36

  Corekci S ^a   Ozturk M K ^b   Cakmak M ^b   Ozcelik S ^b   Ozbay E ^c  

^a Krklareli University   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

AlN thin films; Ammonia flow rate

Indexed keywords

ALN; ALN FILMS; ALN LAYERS; ALN THIN FILMS; C-PLANE SAPPHIRE SUBSTRATES; CRYSTALLINITIES; HIGH RESOLUTION X RAY DIFFRACTION; LAYER THICKNESS; STRUCTURAL QUALITIES;

AMMONIA; ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION;

FLOW RATE;

EID: 84861201435     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.06.003     Document Type: Article

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