SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 43, Issue 3, 2008, Pages 147-152

AlGaN/GaN heterostructure grown on 1∘-tilt sapphire substrate by MOCVD

(6) Lam, K T a Yu, C L b Chang, P C c Liaw, U H d Chang, S J b Lin, J C b

a LEADER UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

d CHINA INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

AFM; AlGaN GaN; Hall measurement; MOCVD; Vicinal cut sapphire; XRD

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; TWO DIMENSIONAL;

CRYSTAL QUALITY; DISLOCATION DENSITY; HALL MEASUREMENT; VICINAL-CUT SAPPHIRE;

HETEROJUNCTIONS;

EID: 39749122158 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2007.08.001 Document Type: Article

Times cited : (4)

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