Growth of GaN films with controlled out-of-plane texture on Si wafers

Thin Solid Films

Volumn 519, Issue 11, 2011, Pages 3608-3611

  Hong, Jung Il ^a   Chang, Yanling ^a   Ding, Yong ^a   Wang, Zhong Lin ^a   Snyder, Robert L ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

Gallium nitride; Interface structure; Pulsed laser deposition; Texture; Transmission electron microscopy

Indexed keywords

AMORPHOUS INTERFACES; FILM SURFACES; GAN FILM; GROWTH OF GAN; INTERFACE STRUCTURE; LOW COSTS; NON-POLAR; OUT-OF-PLANE TEXTURES; PULSED-LASER DEPOSITION TECHNIQUE; SI SUBSTRATES; SI WAFER; SI-BASED;

AMORPHOUS FILMS; AMORPHOUS SILICON; GALLIUM ALLOYS; GALLIUM NITRIDE; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING;

PULSED LASERS;

EID: 79952734813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.281     Document Type: Article

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