The substrate-induced effect of GaN MSM photodetectors on silicon substrate

Semiconductor Science and Technology

Volumn 23, Issue 12, 2008, Pages

  Chiou, Y Z ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LITHOGRAPHY; NONMETALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SMELTING;

GRAIN STRUCTURES; LOW FREQUENCIES; METAL PHOTODETECTORS; MSM PHOTODETECTORS; POOLE-FRENKEL CONDUCTIONS; RESPONSIVITY; SAPPHIRE SUBSTRATES; SEMI-CONDUCTORS; SILICON SUBSTRATES;

SUBSTRATES;

EID: 58149457073     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/12/125007     Document Type: Article

References (11)

1. Chiou Y Z, Su Y K, Chang S J, Gong J, Lin Y C, Liu S H and Chang C S 2003 High detectivity InGaN-GaN multiquantum well p-n junction photodiodes IEEE J. Quantum Electron. 39 681-85
2. Tablero C 2006 Electronic and optical analysis of high-efficiency photovoltaic materials based on a GaN semiconductor Sol. Energy. Mater. Sol. Cells 90 1734-40
3. Wang C K, Ko T K, Chang C S, Chang S J, Su Y K, Wen T C, Kuo C H and Chiou Y Z 2005 The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors IEEE Photon. Technol. Lett. 17 2161-63
4. Burgaud P, Constancias L, Martel G, Savina C and Mesnager D 2007 Preliminary reliability assessment and failure physical analysis on AlGaN/GaNHEMTs COTS Microelectron. Reliab. 47 1653-57
5. Chiou Y Z 2005 Nitride-base band-pass p-i-n photodetectors IEEE Electron. Device Lett. 26 172-4
6. Zhang B, Liang H, Wang Y, Feng Z, Ng K W and Lau K M 2007 High-performance I I I-nitride blue LEDs grown and fabricated on patterned Si substrates J. Cryst. Growth 298 725-30
7. Ishikawa H, Asano K, Zhang B, Egawa T and Jimbo T 2004 Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si Phys. Status Solidi a 201 2653-57
8. Iwakami S, Yanagihara M, Machida O, Chino E, Kaneko N, Goto H and Ohtsuka K 2004 AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation Japan. J. Appl. Phys. 43 L831-33
9. Osinsky A, Gangopadhyay S, Yang J W, Gaska R, Kuksenkov D, Temkin H, Shmagin I K, Chang Y C, Muth J F and Kolbas R M 1998 Visible-blind GaN Schottky barrier detectors grown on Si(111) Appl. Phys. Lett. 72 551-4
10. Chiou Y Z 2005 GaN ultraviolet photodetectors with transparent titanium tungsten and tungsten electrodes J. Electrochem. Soc. 152 G639-42
11. Rose A 1963 Concepts in Photoconductivity and Allied Problems (New York: Wiley)