The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

Applied Surface Science

Volumn 257, Issue 21, 2011, Pages 8846-8849

  Tang, Jianjun ^a   Liang, Ting ^a   Shi, Weili ^a   Zhang, Qianqian ^a   Wang, Yong ^b   Liu, Jun ^a   Xiong, Jijun ^a  

^a NORTH UNIVERSITY OF CHINA   (China)

^b CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

Author keywords

H GaN; Raman spectrum; Stress sensitivity

Indexed keywords

COMPRESSIVE STRESS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; RAMAN SCATTERING; SILICON; WIDE BAND GAP SEMICONDUCTORS;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); DISPLACEMENT LOADING; H-GAN; NITRIDE SEMICONDUCTORS; NON-LINEAR ERROR; PIEZOELECTRIC POLARIZATIONS; RAMAN PEAK SHIFTS; STRESS SENSITIVITY;

GALLIUM NITRIDE;

EID: 79960152535     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.082     Document Type: Article

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