SCOPUS 정보 검색 플랫폼

Journal of Alloys and Compounds

Volumn 552, Issue , 2013, Pages 356-362

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

(2) Naderi, N a Hashim, M R a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

Annealing temperature; MSM photodetector; RF magnetron sputtering; Silicon carbide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE ABSORPTION; FABRICATION; LIGHT ABSORPTION; MAGNETRON SPUTTERING; METAL ANALYSIS; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; POROUS SILICON; SEMICONDUCTING SILICON; SILICON; SILICON CARBIDE; SURFACE ROUGHNESS; WIDE BAND GAP SEMICONDUCTORS;

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; MSM PHOTODETECTOR; OPTOELECTRONIC CHARACTERISTICS; POST DEPOSITION ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ULTRA-VIOLET PHOTODETECTORS;

SUBSTRATES;

EID: 84870706714 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2012.11.085 Document Type: Article

Times cited : (72)

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