AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 295-299

  Joblot, S ^a,b   Cordier, Y ^a   Semond, F ^a   Chenot, S ^a   Vennegues P ^a   Tottereau, O ^a   Lorenzini, P ^a   Massies, J ^a  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

HEMT AlGaN GaN; MBE; Si(001)

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

DRAIN CURRENT; HEMT ALGAN/GAN; SHEET CARRIER DENSITY; SI(001);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33845288980     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.018     Document Type: Article

References (8)

1. Ducatteau D., et al. IEEE Electron device letters 27 1 (2006)
2. Wong W.S., Cho Y., Weber E.R., Sands T., Yu K.M., Krüger J., Wengrow A.B., and Cheung N.W. Appl. Phys. Lett. 75 (1999) 1887-1889
3. Fieger M., et al. Phys. Stat. Sol. C 2 7 (2005) 2607-2610
4. Lebedev V., Jinschek J., Kaiser U., Schröter B., Richter W., and Kräusslich J. Appl. Phys. Lett. 76 (2000) 2029-2031
5. Joblot S., Cordier Y., Semond F., Lorenzini P., Chenot S., and Massies J. Electron. Lett. 42 (2006) 117-118
6. Joblot S., Semond F., Natali F., Vennéguès P., Laügt M., Cordier Y., and Massies J. Proceeding International Workshop on Nitride Semiconductors - Pittsburgh 2004. Phys. Stat. Sol. C (2005) 2187-2190
7. Schulze F., Dadgar A., Bläsing J., Hempel T., Diez A., Christen J., and Krost A. J. Cryst. Growth 289 (2006) 485-488
8. Joblot S., Semond F., Cordier Y., Lorenzini P., and Massies J. Appl. Phys. Lett. 87 (2005) 133505