GaN photodetectors prepared on silicon and sapphire substrates

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2008, Pages

  Chang, S P ^a   Chang, S J ^a   Lu, C Y ^a   Chuang, R W ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLID STATE DEVICES;

APPLIED BIAS; INCIDENT WAVELENGTHS; REJECTION RATIOS; SAPPHIRE SUBSTRATES; SEMICONDUCTOR-METAL PHOTODETECTORS; SI SUBSTRATES;

SUBSTRATES;

EID: 63249099134     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2008.4760697     Document Type: Conference Paper

References (23)

1. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, "High detectivity InGaN-GaN multiquantum well p-n junction photodiodes", IEEE J. Quan. Electron., Vol. 39, No. 5, pp. 681-685, 2003
2. E. Monroy, E. Muňoz, F. J. Sánchez, F. Calley, E. Calleja, B. Beaumont, P. Gibart, J. A. Muňoz, and F. Cussó, "High-performance GaN p-n junction photodetectors for solar ultraviolet applications", Semicond. Sci. Technol., Vol. 13, No. 9, pp. 1042-1046, 1998
3. G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, "High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures", Appl. Phys. Lett., Vol. 71, No. 15, pp. 2154-2156, 1997
4. M. Mosca, J. L. Reverchon, N. Grandjean, and J. Y. Duboz, "Multilayer (Al,Ga)N structures for solar-blind detection", IEEE J. Sel. Top. Quan. Electron., Vol. 10, No. 4, pp. 752-758, 2004.
5. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind AlGaN-Based p-i-n photodiodes with low dark current and high detectivity", IEEE Photon. Technol. Lett., Vol. 16, No. 7, pp. 1718-1720, 2004
6. N. Biyikli, I. Kimukin, T. Tut, T. Kartaloglu, O. Aytur, and E. Ozbay, "High-speed characterization of solar blind AlxGa1-xN p-i-n photodiodes", Semicond. Sci. Technol., Vol. 19, No. 11, pp. 1259-1262, 2004
7. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, "High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN", Appl. Phys. Lett., Vol. 75, No. 2, pp. 247-249, 1999
8. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, and H. Temkin, "Low noise p-π-n GaN ultraviolet photodetectors", Appl. Phys. Lett., Vol. 71, No. 16, pp. 2334-2336, 1997
9. V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. A. Khan, N. Pala, M. Shur, and R. Gaska, "SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors", Appl. Phys. Lett., Vol. 77, No. 6, pp. 863-865, 2000
10. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts", IEEE Electron. Dev. Lett., Vol. 24, pp. 212-214, 2003
11. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN Schottky ultraviolet detectors", Appl. Phys. Lett., Vol. 79, No. 10, pp. 1417-1419, 2001
12. E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, and J. F. Hochedez, "Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection", Appl. Phys. Lett., Vol. 80, No. 17, pp. 3198-3200, 2002
13. J. L. Pau, C. Rivera, E. Muňoz, E. Calleja, U. Schühle, E. Frayssinet, B. Beaumont, J. P. Faurie, and P. Gibart, "Response of ultra-low dislocation density GaN photodetectors in the near-and vacuum-ultraviolet", J. Appl. Phys., Vol. 95, No. 12, pp. 8275-8279, 2004
14. C. F. Shih, N. C. Chen, C. A. Chang, and K. S. Liu, "Blue, green and white InGaN light-emitting diodes grown on Si", Jpn. J. Appl. Phys., Vol. 44, pp. L140-L143, 2005.
15. H. Ishikawa, K. Asano, B. Zhang, T. Egawa, and T. Jimbo, "Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si", Phys. Status Solidi A-Appl. Mat., Vol. 201, pp. 2653-2657, 2004
16. S. Iwakami, M. Yanagihara, O. Machida, E. Chino, N. Kaneko, H. Goto, and K. Ohtsuka, "AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation", Jpn. J. Appl. Phys., Vol. 43, pp. L831-L833, 2004.
17. A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquiere, A. Minko, and M. Uren, "Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates", Microelectron. Reliab., Vol. 43, pp. 1713-1718, 2003
18. P. Javorka, A. Alam, A. Marso, M. Wolter, J. Kuzmik, A. Fox, M. Heuken, and P. Kordos, "Material and device issues of AlGaN/GaN HEMTs on silicon substrates", Microelectron. J., Vol. 34, pp. 435-437, 2003
19. V. Hoel, Y. Guhel, B. Boudart, C. Gaquiere, J. C. De Jaeger, H. Lahreche, and P. Gibart, "Static measurements of GaN MESFETs on (111) Si substrates", Electron. Lett., Vol. 37, pp. 1095-1096, 2001
20. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, pp. 278-283, 2002.
21. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contacts", IEEE J. Quan. Electron., Vol. 39, pp. 1439-1443, 2003
22. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen and J. M. Tsai, "400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, pp. 744-748, 2002.
23. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei and H. M. Lo, "Nitride-based flip-chip ITO LEDs", IEEE Tran. Adv. Packaging, Vol. 28, pp. 273-277, 2005.