메뉴 건너뛰기




Volumn 46, Issue 6, 2009, Pages 846-857

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers

Author keywords

A3. MOCVD; B1. GaN; B1. Nitridation; B1. Silicon substrates; B1. SiNx layer

Indexed keywords

A3. MOCVD; B1. GAN; B1. NITRIDATION; B1. SILICON SUBSTRATES; B1. SINX LAYER;

EID: 70350716282     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.09.009     Document Type: Article
Times cited : (16)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.