Comparison of the properties of GaN grown on complex Si-based structures

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Zhou, S Q ^a   Vantomme, A ^a   Zhang, B S ^b   Yang, H ^b   Wu, M F ^a,c  

^a KU LEUVEN   (Belgium)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SPECTROMETRY;

CHANNELING SPECTROMETRY; EPITAXIAL ORIENTATION; ROOM TEMPERATURE (RT); SEMICONDUCTOR-ON-INSULATORS (SOI);

GALLIUM NITRIDE;

EID: 17044429868     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868870     Document Type: Article

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