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Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 490-495

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

(5) Halidou, I a Benzarti, Z a Bougrioua, Z b Boufaden, T a El Jani, B a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b CHREA CNRS (France)

Author keywords

Correlation; GaN; Hall effect; MOVPE; Photoluminescence; Si N treatment

Indexed keywords

CORRELATION METHODS; ELECTRIC PROPERTIES; HALL EFFECT; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

GAN; MORPHOLOGICAL PROPERTIES; SI/N TREATMENT; TREATMENT GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 33845218838 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2006.09.018 Document Type: Article

Times cited : (14)

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