SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 56, Issue , 2013, Pages 35-44

MBE growth of GaN pn-junction photodetector on AlN/Si(1 1 1) substrate with Ni/Ag as ohmic contact

(5) Mohd Yusoff, M Z a,b Baharin, A b Hassan, Z b Abu Hassan, H b Abdullah, M J b

a UNIVERSITI TEKNOLOGI MARA (Malaysia)

b SCHOOL OF PHYSICS (Malaysia)

Author keywords

GaN Si; III Nitride; Photodetector; pn Junction

Indexed keywords

ALN; CURRENT-VOLTAGE MEASUREMENTS; GAN/SI; GOOD OPTICAL QUALITY; GROWTH OF GAN; III-NITRIDE; MBE GROWTH; P-N JUNCTION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; QUALITY LAYERS; STRUCTURAL EVOLUTION; SYSTEM MEASUREMENT; TEMPERATURE DEPENDENCE; THERMAL-ANNEALING; XRD MEASUREMENTS;

OHMIC CONTACTS; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; TEMPERATURE DISTRIBUTION;

GALLIUM NITRIDE;

EID: 84873811238 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2012.12.018 Document Type: Article

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