Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

Journal of Applied Physics

Volumn 114, Issue 9, 2013, Pages

  Le Boulbar, E D ^a   Girgel I ^a   Lewins, C J ^a   Edwards, P R ^b   Martin, R W ^b   Satka A ^c   Allsopp, D W E ^a   Shields, P A ^a  

^a University of Bath   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE IMAGING; CORE SHELL STRUCTURE; HEIGHT DISTRIBUTION; HIGH ASPECT RATIO; HYDROGEN SILSESQUIOXANE; METAL-ORGANIC VAPOUR PHASE EPITAXY; PASSIVATION LAYER; PHOTOLUMINESCENCE MEASUREMENTS;

ASPECT RATIO; GALLIUM NITRIDE; ORGANOMETALLICS; PASSIVATION; SCAFFOLDS; SHELLS (STRUCTURES);

NANORODS;

EID: 84884936459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819440     Document Type: Article

References (41)

1. C.-H. Liao, W.-M. Chang, Y.-F. Yao, H.-T. Chen, C.-Y. Su, C.-Y. Chen, C. Hsieh, H.-S. Chen, C.-G. Tu, Y.-W. Kiang, C. C. Yang, and T.-C. Hsu, J. Appl. Phys. 113, 054315 (2013). 10.1063/1.4790710
2. S. Li, X. Wang, S. Fundling, M. Erenburg, J. Ledig, J. Wei, H. H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg, A. Trampert, U. Jahn, H. Riechert, H. Jonen, and A. Hangleiter, Appl. Phys. Lett. 101, 032103 (2012). 10.1063/1.4737395
3. T.-W. Yeh, Y.-T. Lin, L. S. Stewart, P. D. Dapkus, R. Sarkissian, J. D. O'Brien, B. Ahn, and S. R. Nutt, Nano Lett. 12, 3257 (2012). 10.1021/nl301307a
4. A. Waag, X. Wang, S. Fundling, J. Ledig, M. Erenburg, R. Neumann, M. Al Suleiman, S. Merzsch, J. Wei, S. Li, H. H. Wehmann, W. Bergbauer, M. Straßburg, A. Trampert, U. Jahn, and H. Riechert, Phys. Status Solidi C 8, 2296 (2011). 10.1002/pssc.201000989
5. J.-R. Chang, S.-P. Chang, Y.-J. Li, Y.-J. Cheng, K.-P. Sou, J.-K. Huang, H.-C. Kuo, and C.-Y. Chang, Appl. Phys. Lett. 100, 261103 (2012). 10.1063/1.4731629
6. H. Sekiguchi, K. Kishino, and A. Kikuchi, Appl. Phys. Express 1, 124002 (2008). 10.1143/APEX.1.124002
7. J. J. Wierer, Q. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, Nanotechnology 23, 194007 (2012). 10.1088/0957-4484/23/19/194007
8. A. D. L. Bugallo, L. Rigutti, G. Jacopin, F. H. Julien, C. Durand, X. J. Chen, D. Salomon, J. Eymery, and M. Tchernycheva, Appl. Phys. Lett. 98, 233107 (2011). 10.1063/1.3596446
9. P. Waltereit, O. Brandt, A. Trampert, H. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. Ploog, Nature 406, 865 (2000). 10.1038/35022529
10. Q. Sun and J. Han, GaN and ZnO-Based Materials and Devices, edited by, S. Pearton, Springer Series in Materials Science (Springer, 2012), Vol. 156, pp. 1-27.
11. S.-C. Ling, T.-C. Lu, S.-P. Chang, J.-R. Chen, H.-C. Kuo, and S.-C. Wang, Appl. Phys. Lett. 96, 231101 (2010). 10.1063/1.3449557
12. S. Li and A. Waag, J. Appl. Phys. 111, 071101 (2012). 10.1063/1.3694674
13. K. Kishino, H. Sekiguchi, and A. Kikuchi, J. Cryst. Growth 311, 2063 (2009). 10.1016/j.jcrysgro.2008.11.056
14. P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp, Phys. Status Solidi C 9, 631 (2012). 10.1002/pssc.201100394
15. D. Paramanik, A. Motayed, G. S. Aluri, J.-Y. Ha, S. Krylyuk, A. V. Davydov, M. King, S. McLaughlin, S. Gupta, and H. Cramer, J. Vac. Sci. Technol. B 30, 052202 (2012). 10.1116/1.4739424
16. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. Den Baars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996). 10.1063/1.116495
17. S. Krylyuk, D. Paramanik, M. King, A. Motayed, J.-Y. Ha, J. E. Bonevich, A. Talin, and A. V. Davydov, Appl. Phys. Lett. 101, 241119 (2012). 10.1063/1.4769376
18. B. Mattias Borg, J. Johansson, K. Storm, and K. Deppert, J. Cryst. Growth 366, 15 (2013). 10.1016/j.jcrysgro.2012.12.142
19. Y. D. Zhuang, C. J. Lewins, S. Lis, P. A. Shields, and D. W. E. Allsopp, IEEE Photon. Technol. Lett. 25, 1047 (2013). 10.1109/LPT.2013.2259807
20. Y.-H. Ra, R. Navamathavan, J.-H. Park, and C.-R. Lee, ACS App. Mater. Interfaces 5, 2111-2117 (2013). 10.1021/am303056v
21. K. Kishino, J. Kamimura, and K. Kamiyama, Appl. Phys. Express 5, 031001 (2012). 10.1143/APEX.5.031001
22. A.-L. Bavencove, G. Tourbot, E. Pougeoise, J. Garcia, P. Gilet, F. Levy, B. André, G. Feuillet, B. Gayral, B. Daudin, and L. S. Dang, Phys. Status Solidi A 207, 1425 (2010). 10.1002/pssa.200983603
23. C. Kölper, M. Sabathil, F. Römer, M. Mandl, M. Strassburg, and B. Witzigmann, Phys. Status Solidi A 209, 2304 (2012). 10.1002/pssa.201228178
24. P. A. Shields and D. W. E. Allsopp, Microelectron. Eng. 88, 3011 (2011). 10.1016/j.mee.2011.04.063
25. N. A. Fichtenbaum, C. J. Neufeld, C. Schaake, Y. Wu, M. H. Wong, M. Grundmann, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Jpn. J. Appl. Phys., Part 2 46, L230 (2007). 10.1143/JJAP.46.L230
26. D. Du, D. Srolovitz, M. Coltrin, and C. Mitchell, Phys. Rev. Lett. 95, 155503 (2005). 10.1103/PhysRevLett.95.155503
27. J. W. Elam, D. Routkevitch, P. P. Mardilovich, and S. M. George, Chem. Mater. 15, 3507 (2003). 10.1021/cm0303080
28. P. Gibart, Rep. Prog. Phys. 67, 667 (2004). 10.1088/0034-4885/67/5/R02
29. P. A. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, and D. Allsopp, Phys. Status Solidi C 8, 2334 (2011). 10.1002/pssc.201000996
30. R. Tiron, L. Mollard, O. Louveau, and E. Lajoinie, J. Vac. Sci. Technol. B 25, 1147 (2007). 10.1116/1.2743653
31. D. Zhuang and J. H. Edgar, Mater. Sci. Eng. R. 48, 1 (2005). 10.1016/j.mser.2004.11.002
32. C. Liu, P. A. Shields, Q. Chen, D. W. E. Allsopp, W. N. Wang, C. R. Bowen, T.-L. Phan, and D. Cherns, Phys. Status Solidi C 7, 32 (2010). 10.1002/pssc.200982618
33. L. T. Tung, K. L. Lin, E. Y. Chang, W. C. Huang, Y. L. Hsiao, and C. H. Chiang, J. Phys.: Conf. Ser. 187, 012021 (2009). 10.1088/1742-6596/187/1/012021
34. V. Laneuville, F. Demangeot, R. Péchou, P. Salles, A. Ponchet, G. Jacopin, L. Rigutti, A. De Luna Bugallo, M. Tchernycheva, F. Julien, K. March, L. Zagonel, and R. Songmuang, Phys. Rev. B 83, 115417 (2011). 10.1103/PhysRevB.83.115417
35. M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D. W. E. Allsopp, and J. Zuniga-Perez, J. Appl. Phys. 114, 084307 (2013). 10.1063/1.4818962
36. P. R. Edwards and R. W. Martin, Semicond. Sci. Technol. 26, 064005 (2011). 10.1088/0268-1242/26/6/064005
37. K. O'Donnell, R. Martin, C. Trager-Cowan, M. White, K. Esona, C. Deatcher, P. Middleton, K. Jacobs, W. Van der Stricht, C. Merlet, B. Gil, A. Vantomme, and J. F. Mosselmans, Mater. Sci. Eng., B 82, 194 (2001). 10.1016/S0921-5107(00)00706-6
38. Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. Shan Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, Appl. Phys. Lett. 100, 201108 (2012). 10.1063/1.4719100
39. C. Liu, A. Šatka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, Appl. Phys. Express 2, 121002 (2009). 10.1143/APEX.2.121002
40. A. David, H. Benisty, and C. Weisbuch, Rep. Prog. Phys. 75, 126501 (2012). 10.1088/0034-4885/75/12/126501
41. C. J. Lewins, D. W. E. Allsopp, P. A. Shields, X. Gao, B. Humphreys, and W. N. Wang, J. Disp. Technol. 9, 333 (2013). 10.1109/JDT.2012.2233194