Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 11, 2012, Pages 2304-2312

  Kölper, Christopher ^a   Sabathil, Matthias ^a   Römer, Friedhard ^b   Mandl, Martin ^a   Strassburg, Martin ^a   Witzigmann, Bernd ^b  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

efficiency droop; III nitride semiconductors; InGaN; light emitting diodes; nanorods

Indexed keywords

ACTIVE AREA; ACTIVE LAYER; CORE-SHELL; CURRENT SPREADING; DEVICE PROPERTIES; EMITTED PHOTONS; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCIES; GAN FACETS; HIGH ASPECT RATIO; III-NITRIDE SEMICONDUCTORS; INGAN; INGAN LED; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; M-PLANE; NON-POLAR; PHOTON RECYCLING; PIEZO-ELECTRIC FIELDS; THEORETICAL STUDY; TRANSPARENT CONDUCTIVE OXIDES;

ASPECT RATIO; EFFICIENCY; GALLIUM NITRIDE; NANORODS; OPTICAL PROPERTIES; PHOTONS; QUANTUM EFFICIENCY; RECYCLING; SEMICONDUCTOR QUANTUM WELLS; SHELLS (STRUCTURES);

LIGHT EMITTING DIODES;

EID: 84865312553     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228178     Document Type: Article

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