Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Li, Shunfeng ^a   Wang, Xue ^a   Fündling, Sönke ^a   Erenburg, Milena ^a   Ledig, Johannes ^a   Wei, Jiandong ^a   Wehmann, Hergo H ^a   Waag, Andreas ^a   Bergbauer, Werner ^b   Mandl, Martin ^a,b   Strassburg, Martin ^b   Trampert, Achim ^c   Jahn, Uwe ^c   Riechert, Henning ^c   Jönen, Holger ^a   Hangleiter, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORE SHELL STRUCTURE; CORE-SHELL; CORE-SHELL MORPHOLOGIES; GAN LIGHT-EMITTING DIODES; INGAN/GAN MULTI-QUANTUM WELL; INTERNAL QUANTUM EFFICIENCY; LED ARRAYS; LINE SCAN; PATTERNED SUBSTRATES; ROOM TEMPERATURE; SELECTIVE AREA GROWTH; SELECTIVE AREAS; TOP SURFACE;

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SHELLS (STRUCTURES); TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 84864251152     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737395     Document Type: Article

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