Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Fichtenbaum, Nicholas A ^a   Neufeld, Carl J ^a   Schaake, Chris ^a   Wu, Yuan ^a   Wong, Man Hoi ^a   Grundmann, Michael ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Holographic lithography; Indium gallium nitride; Metalorganic chemical vapor deposition; N polar gallium nitride; Nanostructures; Nonpolar gallium nitride

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

HOLOGRAPHIC LITHOGRAPHY; INDIUM GALLIUM NITRIDE; N-POLAR GALLIUM NITRIDE; NONPOLAR GALLIUM NITRIDE;

NANOSTRUCTURES;

EID: 34547881894     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L230     Document Type: Article

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