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Volumn 98, Issue 23, 2011, Pages

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

(9) Bugallo, A De Luna a Rigutti, L a Jacopin, G a Julien, F H a Durand, C b Chen, X J b Salomon, D b Eymery, J b Tchernycheva, M a

a UNIVERSITÉ PARIS SACLAY (France)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; DETECTOR RESPONSE; INGAN/GAN; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTIQUANTUM WELLS; NON-POLAR; PHOTOCONDUCTIVE GAINS;

CATALYSTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS; VAPORS; WIRE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79959337751 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596446 Document Type: Article

Times cited : (61)

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