Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2063-2068

  Kishino, Katsumi ^a,b   Sekiguchi, Hiroto ^a,b   Kikuchi, Akihiko ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Desorption; A1. Growth models; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; DESORPTION; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; OPTICAL DEVICES; PHOTOMASKS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SURFACE DIFFUSION;

A1. DESORPTION; A1. GROWTH MODELS; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; A3. SELECTIVE EPITAXY; B1. NITRIDES;

GALLIUM NITRIDE;

EID: 63349111144     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.056     Document Type: Article

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