Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Krylyuk, Sergiy ^a,b   Paramanik, Dipak ^a   King, Matt ^c   Motayed, Abhishek ^a,b   Ha, Jong Yoon ^a,b   Bonevich, John E ^a   Talin, Alec ^a   Davydov, Albert V ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b The Institute for Research in Electronics and Applied Physics   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL INTERFACE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; EPITAXIAL OVERGROWTH; HALIDE VAPOR PHASE EPITAXY; HEXAGONAL PYRAMIDS; MG-DOPING; P-SHELL; RAMAN SCATTERING MEASUREMENTS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILICON SUBSTRATES; TOPDOWN; VERTICALLY ALIGNED;

EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; TRANSMISSION ELECTRON MICROSCOPY;

SHELLS (STRUCTURES);

EID: 84871316923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769376     Document Type: Article

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