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Volumn 100, Issue 20, 2012, Pages

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

(14) Zhao, Yuji a Yan, Qimin a Huang, Chia Yen a Huang, Shih Chieh a Shan Hsu, Po a Tanaka, Shinichi a Pan, Chih Chien a Kawaguchi, Yoshinobu a Fujito, Kenji b Van De Walle, Chris G a Speck, James S a Denbaars, Steven P a Nakamura, Shuji a Feezell, Daniel a

a University of California (United States)

b MITSUBISHI CHEMICAL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PROPERTIES; EMISSION WAVELENGTH; GAN SUBSTRATE; INCORPORATION RATES; INGAN QUANTUM WELLS; NON-POLAR; POTENTIAL PROFILES; SEMIPOLAR;

ELECTRIC FIELDS; GALLIUM NITRIDE; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS;

INDIUM;

EID: 84861813337 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4719100 Document Type: Article

Times cited : (180)

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