Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 32-35

  Liu, Chaowang ^a   Shields, Philip A ^a   Chen, Qin ^a   Allsopp, Duncan W E ^a   Wang, Wang Nang ^a   Bowen, Chris R ^b   Phan, T L ^c   Cherns, David ^c  

^a University of Bath   (United Kingdom)

^b University of Bath   (United Kingdom)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; GAN FILM; GAN SUBSTRATE; GROWTH BEHAVIOUR; GROWTH CONDITIONS; GROWTH MODES; MOVPE; PATTERNED SUBSTRATES; SELECTIVE AREA GROWTH; SEM; SHARP TIP; TEM; THROUGH-MASK;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; GALLIUM NITRIDE; MASKS; NANOIMPRINT LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH;

GALLIUM ALLOYS;

EID: 77949691072     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982618     Document Type: Conference Paper

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