Doping-less tunnel field effect transistor: Design and investigation

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3285-3290

  Kumar, M Jagadesh ^a   Janardhanan, Sindhu ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Band to band tunneling; charge plasma; simulation; technology computer aided design (TCAD); tunnel field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; CHARGE-PLASMA; SIMULATION; TECHNOLOGY COMPUTER AIDED DESIGN; TUNNEL FIELD EFFECT TRANSISTOR;

PLASMAS; SILICON WAFERS; SUBSTRATES; TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 84884812351     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2276888     Document Type: Article

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