A simulation-based study of sensitivity to parameter fluctuations of silicon tunnel FETs

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 345-348

  Boucart, Kathy ^a   Ionescu, Adrian M ^a   Riess, Walter ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DIELECTRIC THICKNESS; DOPING PROFILES; DOUBLE-GATE; GATE DIELECTRIC THICKNESS; HIGH-K GATE DIELECTRICS; HIGHLY SENSITIVE; PARAMETER FLUCTUATIONS; SIMULATION-BASED; TARGET VALUES; TUNNEL FET;

ALIGNMENT; GATES (TRANSISTOR); MESFET DEVICES; SOLID STATE DEVICES; TUNNEL JUNCTIONS;

GATE DIELECTRICS;

EID: 78649927715     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618218     Document Type: Conference Paper

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