Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 53-56

  Le Royer, C ^a   Mayer, F ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CIRCUIT APPLICATION; EXPERIMENTAL STUDIES; FULLY DEPLETED SOI; METAL GATE STACK; OFF CURRENT; ON CURRENTS; SUBTHRESHOLD SWING; TUNNEL FET; TUNNEL FIELD EFFECT TRANSISTOR;

GERMANIUM; TUNNELS; WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 67650679328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897537     Document Type: Conference Paper

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