Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect Transistor

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 80-86

  Jhaveri, Ritesh ^a,b   Nagavarapu, Venkatagirish ^a,c   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c SanDisk Corporation   (United States)

Author keywords

Band to band tunneling; low power; steep subthreshold swing (SS); tunnel field effect transistor (TFET)

Indexed keywords

ACTIVE POWER; AMBIPOLAR CONDUCTION; ANNEALING CONDITION; BAND TO BAND TUNNELING; DEVICE PERFORMANCE; DRAIN EXTENSIONS; INJECTION MECHANISMS; LOW OPERATING POWER; LOW POWER; LOW-TEMPERATURE MEASUREMENTS; NEW DEVICES; POCKET DOPING; SIDE POCKETS; SUBTHRESHOLD; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE;

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TEMPERATURE MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 78650891117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2089525     Document Type: Article

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