SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

(4) Lattanzio, Livio a Biswas, Arnab a De Michielis, Luca a Ionescu, Adrian M a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE ARCHITECTURES; METAL OXIDE SEMICONDUCTOR; METAL SOURCES; ON-CURRENTS; PREDICTED PERFORMANCE; QUANTUM MECHANICAL; ROOM TEMPERATURE; SILICON CHANNEL; SUBTHRESHOLD SWING; TUNNELING DIELECTRICS; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING MECHANISM; TWO-DIMENSIONAL NUMERICAL SIMULATION; ULTRA-THIN;

IONS; QUANTUM THEORY;

FIELD EFFECT TRANSISTORS;

EID: 79953861672 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569760 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.