SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 6, 2009, Pages

Impact of strain on drain current and threshold voltage of nanoscale double gate tunnel field effect transistor: Theoretical investigation and analysis

(2) Sneh, Saurabh a Kumar, M Jagadesh a

a INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT APPLICATION; DEVICE SIMULATIONS; DOUBLE GATE; HIGH-THRESHOLD VOLTAGES; LOW LEAKAGE; LOW THRESHOLD VOLTAGE; LOW-LEAKAGE CURRENT; NANO SCALE; ON-CURRENTS; SHORT-CHANNEL EFFECT; SUBTHRESHOLD SLOPE; THEORETICAL INVESTIGATIONS; TUNNEL FIELD EFFECT TRANSISTOR;

DRAIN CURRENT; THRESHOLD VOLTAGE; TUNNELS; WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 68649084968 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.064503 Document Type: Article

Times cited : (130)

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