Bipolar charge-plasma transistor: A novel three terminal device

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 962-967

  Kumar, M Jagadesh ^a   Nadda, Kanika ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Bipolar charge plasma transistor (BCPT); complementary metal oxide semiconductor (CMOS) technology; current gain; silicon on insulator (SOI); simulation

Indexed keywords

BIPOLAR CHARGE-PLASMA TRANSISTOR (BCPT); CURRENT GAIN; DOPANT ACTIVATION; ELECTRICAL CHARACTERISTIC; HIGH CURRENT GAIN; LATERAL BIPOLAR JUNCTION TRANSISTORS; N-P-N TRANSISTORS; P-TYPE; SILICON-ON-INSULATOR (SOI); SILICON-ON-INSULATORS; SIMULATION; SOI STRUCTURE; THREE-TERMINAL DEVICES; ULTRA-THIN;

PLASMAS; SEMICONDUCTOR DOPING; TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 84859211520     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2184763     Document Type: Article

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