Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering

IEEE Transactions on Electron Devices

Volumn 52, Issue 5, 2005, Pages 909-917

  Bhuwalka, Krishna K ^a   Schulze, Jörg ^a   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Gate workfunction engineering; Leakage currents; Scaling; SiGe; Subthreshold swing; Surface tunnel transistor; Tunnel bandgap modulation; Vertical tunnel field effect transistor

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; TUNNEL DIODES;

GATE WORKFUNCTION ENGINEERING; SUBTHRESHOLD SWING; SURFACE TUNNEL TRANSISTOR; TUNNEL BANDGAP MODULATION; VERTICAL TUNNEL FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 18844389545     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.846318     Document Type: Article

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