Random dopant fluctuation in limited-width FinFET technologies

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 2055-2060

  Chiang, Meng Hsueh ^a   Lin, Jeng Nan ^a   Kim, Keunwoo ^b   Chuang, Ching Te ^b  

^a NATIONAL ILAN UNIVERSITY   (Taiwan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

FinFETs; Random dopant fluctuation (RDF)

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); RANDOM PROCESSES; SEMICONDUCTING SILICON;

FIN FIELD EFFECT TRANSISTORS; RANDOM DOPANT FLUCTUATION (RDF); SILICON CHANNEL;

FIELD EFFECT TRANSISTORS;

EID: 34547921216     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901154     Document Type: Article

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