Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3684-3695

  Schenk, Andreas ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013226142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368545     Document Type: Article

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