Complementary germanium electron-hole bilayer tunnel FET for sub-0.5-V operation

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 167-169

  Lattanzio, Livio ^a   De Michielis, Luca ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

Band to band tunneling (BTBT); electron hole (EH) bilayer; field effect transistor (FET); germanium; subthreshold slope; tunnel FET (TFET)

Indexed keywords

BAND TO BAND TUNNELING; ELECTRON HOLE; FIELD-EFFECT TRANSISTOR (FET); SUBTHRESHOLD SLOPE; TUNNEL FET (TFET);

ELECTRIC FIELDS; GERMANIUM;

MESFET DEVICES;

EID: 84856240950     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2175898     Document Type: Article

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