Study of random dopant fluctuation induced variability in the raised-ge-source TFET

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 184-186

  Damrongplasit, Nattapol ^a   Kim, Sung Hwan ^b   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SuVolta Inc   (United States)

Author keywords

Germanium (Ge); random dopant fluctuations (RDF); TFET variability; tunnel field effect transistors (TFET); tunneling

Indexed keywords

DRAIN-INDUCED BARRIER; LOWER ENERGIES; MOS-FET; RANDOM DOPANT FLUCTUATION; SOURCE REGION; SUBTHRESHOLD SWING; TCAD SIMULATION; TFET VARIABILITY;

DESIGN; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; OPTIMIZATION; THREE DIMENSIONAL COMPUTER GRAPHICS; TRANSPORT PROPERTIES;

GERMANIUM;

EID: 84873060992     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2235404     Document Type: Article

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