Schottky collector bipolar transistor without impurity doped emitter and base: Design and performance

IEEE Transactions on Electron Devices

Volumn 60, Issue 9, 2013, Pages 2956-2959

  Nadda, Kanika ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

CMOS technology; current gain; Schottky collector bipolar transistor; silicon on insulator; simulation

Indexed keywords

2-D DEVICE SIMULATIONS; CMOS TECHNOLOGY; CURRENT GAINS; ELECTRONS AND HOLES; HIGH CURRENT GAIN; SCHOTTKY COLLECTOR; SILICON FILMS; SIMULATION;

CMOS INTEGRATED CIRCUITS; CUTOFF FREQUENCY; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

TRANSISTORS;

EID: 84883285041     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2272943     Document Type: Article

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